The Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP) is working to strengthen U.S. leadership in critical technologies — including high-performance computing, advanced manufacturing, 5G and beyond — by creating new materials and process paradigms for efficient electrical interconnects, photonic integration, and in-memory computing solutions targeting digital, analog, and RF platforms.

ASAP’s research program includes:

• multiphysics modeling of inverse material design and reliability-aware materials process development for improved interconnect conductors and inter-wire dielectrics; 
• scalable integration of III-V and III-N devices on silicon for optical and terahertz interconnects; 
• development of non- volatile CMOS-compatible memory for in-memory and non-von Neumann computing.

ASAP will also strive to advance the new frontier of low temperature, ultra-high aspect ratio, in situ and 3D monitoring, and self- assembled monolithic approaches. The tightly coupled experimental-theoretical approach to materials design, the cross- disciplinary expertise of team members, and experimental capabilities are required to address challenging scientific and industry-relevant problems.